A 0.42-Nanometer Breakthrough From TSMC Could Push Transistors Beyond Silicon

Executive Briefing & Key Highlights

Researchers at National Yang Ming Chiao Tung University and TSMC Corporate Research engineered a 0.42-nanometer aluminum-oxide interface that protects electron transport in monolayer MoS₂ transistors while enabling strong gate control. Silicon transistors are approaching physical limits that make each new generation… Read More The post A 0.42-Nanometer Breakthrough From TSMC Could Push Transistor