NoMIS Power Advances SiC Roadmap with 6.5 kV MOSFET

Executive Briefing & Key Highlights

The large-die device delivers over 8 kV blocking, 90 mΩ on-resistance and 55 A drain current for emerging high-voltage power systems. The post NoMIS Power Advances SiC Roadmap with 6.5 kV MOSFET appeared first on Power Electronics News.