Power Electronics News17 September 2026
Power Corner: Scaling Vertical GaN FinFETs on an Engineered Substrate
Original Publication
Power Electronics News
Executive Briefing & Key Highlights
Vertical Semiconductor's CEO discusses scaling FinFET vertical GaN on engineered substrates for AI data center power. The post Power Corner: Scaling Vertical GaN FinFETs on an Engineered Substrate appeared first on Power Electronics News.
Topics:powerelectronicsEVDevice TechWide BandgapMaterialsEV/PowerSemiconductor
