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Power Corner: Scaling Vertical GaN FinFETs on an Engineered Substrate 
Power Electronics News17 September 2026

Power Corner: Scaling Vertical GaN FinFETs on an Engineered Substrate 

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Executive Briefing & Key Highlights

Vertical Semiconductor's CEO discusses scaling FinFET vertical GaN on engineered substrates for AI data center power. The post Power Corner: Scaling Vertical GaN FinFETs on an Engineered Substrate  appeared first on Power Electronics News.

Topics:powerelectronicsEVDevice TechWide BandgapMaterialsEV/PowerSemiconductor