Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration

Executive Briefing & Key Highlights

Workflow for predictive simulation of normally-off p-GaN HEMTs, with an emphasis on device-physics calibration, leakage modeling, dynamic RDS(on), breakdown behavior, and ML-assisted design exploration. The post Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration appeared first on Semiconductor Engineering.