
Power Electronics News30 September 2026
Renesas 650V GaN Enables High-Density 800V AI Power
Original Publication
Power Electronics News
Executive Briefing & Key Highlights
The new device combines 20mΩ on-resistance with dual-side cooling for compact, high-density 800V power conversion. The post Renesas 650V GaN Enables High-Density 800V AI Power appeared first on Power Electronics News.
Topics:powerelectronicsEVWide BandgapMaterialsEV/PowerSemiconductor
